安德维京 lv5lv5 11年5月30日 Abstract:Thisreviewpaperbringstogetherthemostprevalentandimportantmodelsforreliabilityfailuresinsemiconductordevices.Itgivesaexplanationofthefailure,thefailuremodel(s)andconstraintsofthemodels.Examplesarepresentedshowingtheapplicationofthemodelsforderivingaccelerationfactors.Originalreferencesareincludedforeachmodel. 帮admin老大补上abstract:) 谢谢楼主，好东东！
adminM可靠性网管理员 lv6lv6 11年5月29日 [b]SemiconductorDeviceReliabilityFailureModels[/b] Abstract:Noabstract. Keywords:ReliabilityModeling,FailureMechanisms,Electromigration,Corrosion,StressMigration Authors:RichardBlish,NoelDurrant [b]TableofContents[/b] Objectives,ScopeandExplanationofSymbols3 A.ELECTROMIGRATION.4 B.CORROSION.7 C.TIMEDEPENDANTDIELECTRICBREAKDOWN9 D.HOTCARRIERINJECTION12 E.SURFACEINVERSION(MobileIons).14 F.STRESSMIGRATION.16 G.TEMPERATURECYCLING&THERMALSHOCK19 H.SOFTERRORS(SingleEventUpsets).22 I.DesignofExperimentsforDeterminationofModelingParameters.24 J.Time-To-FailureDistributions.25
购买了付费内容
谢谢分享
不错，谢谢
好像主要是wafer级的加速度模型，这个公司的资料确实不错
谢谢楼主了
水平有限，看不懂，能不能搞点中文的上来
不错！
谢谢分享！
Abstract:Thisreviewpaperbringstogetherthemostprevalentandimportantmodelsforreliabilityfailuresinsemiconductordevices.Itgivesaexplanationofthefailure,thefailuremodel(s)andconstraintsofthemodels.Examplesarepresentedshowingtheapplicationofthemodelsforderivingaccelerationfactors.Originalreferencesareincludedforeachmodel.
帮admin老大补上abstract:)
谢谢楼主，好东东！
[b]SemiconductorDeviceReliabilityFailureModels[/b]
Abstract:Noabstract.
Keywords:ReliabilityModeling,FailureMechanisms,Electromigration,Corrosion,StressMigration
Authors:RichardBlish,NoelDurrant
[b]TableofContents[/b]
Objectives,ScopeandExplanationofSymbols3
A.ELECTROMIGRATION.4
B.CORROSION.7
C.TIMEDEPENDANTDIELECTRICBREAKDOWN9
D.HOTCARRIERINJECTION12
E.SURFACEINVERSION(MobileIons).14
F.STRESSMIGRATION.16
G.TEMPERATURECYCLING&THERMALSHOCK19
H.SOFTERRORS(SingleEventUpsets).22
I.DesignofExperimentsforDeterminationofModelingParameters.24
J.Time-To-FailureDistributions.25