Semiconductor Reliability

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SemiconductorReliability

IntroductiontoReliabilityMethodology

InfantmortalityreductionforMOSFET

RandomFailureRatePredictionMethod

TemperatureAcceleration

Arrheniusmodel:
Example:
1000hourhightemperaturelifetestat150°Cisequivalenttohowmanyhoursofoperatinglifeat55°C.Assumingtheactivationenergyis0.7ev
AF=EXP{(0.7/8.617×10-5)x[1/(273+55)-1/(273+150)]}=260
Sothetotalequivalentoperatingtimeis260,000hror27.6year
ForEa=1.0evAF=2825

ActivationEnergyvs.FailureMechanism

Note:Forhightemperatureoperatinglifetestwithunknownormultiplefailuremechanismusuallyaverageactivationenergy
of0.7evisusedforsemiconductorindustry.ThisisalsoallowedbyJEDECstandard

WearOutRegion(WaferProcessReliability)

PeckModel:Temperature&HumidityAcceleration

ExampleforManson-Coffin’sModel

AccelerationFactorAF={(TH-TL)/(Th-Ta)}M
ExampleforManson-Coffin’sModel
Example:30temperaturecycleforadevicefrom-65ºCto150ºCisequivalenttohowmanyyearsofoperationinacomputerenvironmenthavingjunctiontemperatureof55ºC.Assumingthecomputerturnonandoff3timesaday.(Troom=25ºC)
AF={(150+65)/(55-25)}6(formostofthepackagefailureM~6)=135489
EquivalentYear=30X135489/3/365=3712Yr
ForTj=85ºCAF=2117
EquivalentYear=30X2117/3/365=58Yr