Semiconductor Reliability
供应商上课的讲义,和大家分享!SemiconductorReliability
IntroductiontoReliabilityMethodology
InfantmortalityreductionforMOSFET
RandomFailureRatePredictionMethod
TemperatureAcceleration
Arrheniusmodel:
Example:
1000hourhightemperaturelifetestat150°Cisequivalenttohowmanyhoursofoperatinglifeat55°C.Assumingtheactivationenergyis0.7ev
AF=EXP{(0.7/8.617x10-5)x}=260
Sothetotalequivalentoperatingtimeis260,000hror27.6year
ForEa=1.0evAF=2825
ActivationEnergyvs.FailureMechanism
Note:Forhightemperatureoperatinglifetestwithunknownormultiplefailuremechanismusuallyaverageactivationenergy
of0.7evisusedforsemiconductorindustry.ThisisalsoallowedbyJEDECstandard
WearOutRegion(WaferProcessReliability)
PeckModel:Temperature&HumidityAcceleration
ExampleforManson-Coffin’sModel
AccelerationFactorAF={(TH-TL)/(Th-Ta)}M
ExampleforManson-Coffin’sModel
Example:30temperaturecycleforadevicefrom-65ºCto150ºCisequivalenttohowmanyyearsofoperationinacomputerenvironmenthavingjunctiontemperatureof55ºC.Assumingthecomputerturnonandoff3timesaday.(Troom=25ºC)
AF={(150+65)/(55-25)}6(formostofthepackagefailureM~6)=135489
EquivalentYear=30X135489/3/365=3712Yr
ForTj=85ºCAF=2117
EquivalentYear=30X2117/3/365=58Yr
Failurerateunit:
1FIT=onefailureperonebilliondevicehours
=1PPMper1000devicehour
=10-91/hr 我也看看,谢谢楼主的资料! 不错的资料,几个加速模型的例子,大家可以参考一下。 shared!TKS good
IC公司都有这种讲义,但有些出于保密,不能和大家分享!!! 感谢分享!~ good 感谢分享
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