|
供应商上课的讲义,和大家分享!
SemiconductorReliability
IntroductiontoReliabilityMethodology
InfantmortalityreductionforMOSFET
RandomFailureRatePredictionMethod
TemperatureAcceleration
Arrheniusmodel:
Example:
1000hourhightemperaturelifetestat150°Cisequivalenttohowmanyhoursofoperatinglifeat55°C.Assumingtheactivationenergyis0.7ev
AF=EXP{(0.7/8.617x10-5)x[1/(273+55)-1/(273+150)]}=260
Sothetotalequivalentoperatingtimeis260,000hror27.6year
ForEa=1.0evAF=2825
ActivationEnergyvs.FailureMechanism
Note:Forhightemperatureoperatinglifetestwithunknownormultiplefailuremechanismusuallyaverageactivationenergy
of0.7evisusedforsemiconductorindustry.ThisisalsoallowedbyJEDECstandard
WearOutRegion(WaferProcessReliability)
PeckModel:Temperature&HumidityAcceleration
ExampleforManson-Coffin’sModel
AccelerationFactorAF={(TH-TL)/(Th-Ta)}M
ExampleforManson-Coffin’sModel
Example:30temperaturecycleforadevicefrom-65ºCto150ºCisequivalenttohowmanyyearsofoperationinacomputerenvironmenthavingjunctiontemperatureof55ºC.Assumingthecomputerturnonandoff3timesaday.(Troom=25ºC)
AF={(150+65)/(55-25)}6(formostofthepackagefailureM~6)=135489
EquivalentYear=30X135489/3/365=3712Yr
ForTj=85ºCAF=2117
EquivalentYear=30X2117/3/365=58Yr
|
本帖子中包含更多资源
您需要 登录 才可以下载或查看,没有账号?-注 册-
×
评分
-
查看全部评分
|