一篇小分析文章
Advancesinintegratedcircuitfabricationtechnologyoverthepasttwo
decadeshaveresultedinintegratedcircuitswithsmallerdevicedimensionsand
largerareaandcomplexity.Thisevolutionoftechnologyhighlightselectromigration
asamajorreliabilityprobleminsiliconVLSIcircuits.Emphasisis
placedonthescopeanddetailoftheelectromigrationteststructures
themselves,andontheanalysisofelectromigrationeffectswithinvarioustypes
ofaluminumteststructures. |