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CMOS电路的闩锁效应及ESD论文

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发表于 2009-6-4 00:53:32 | 显示全部楼层 |阅读模式
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ElectrostaticDischarge(ESD)
Contents
Introduction.............................................................................2
WhatisESD?........................................................................2
ESDTestModels.....................................................................2
Human-BodyModel(HBM)..................................................................2
MachineModel(MM).......................................................................2
Charged-DeviceModel(CDM)...............................................................3
ESDFailures.............................................................................3
LatentFailures.......................................................................3
ESDFailureModes...................................................................3
ESDProtectionStrategy..................................................................4
ESDProtectionMethods...............................................................4
ESDDesignRules....................................................................5
ESDDesignChecker.......................................................................5
ESDProtectionAnalysis....................................................................6
ESDAvoidance.......................................................................6
ESDControlProgram......................................................................6
TrainingandCertification...................................................................7
ESDTeam................................................................................7
AuditCompliance..........................................................................7
TIESDHandlingProcedures................................................................7
References..............................................................................7


第十二章CMOS电路的闩锁效应(Latch-upEffect)

CMOS电路闩锁效应是在异常工作条件下,引发的CMOS电路中的寄生晶体管进入的一种异常状态。
CMOS电路受激发发生闩锁效应时,电路的VDD与VSS间呈低阻状态,类似可控硅器件的特性。因而闩锁效应也成为可控硅效应。

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发表于 2009-6-4 07:46:40 | 显示全部楼层
CMOS电路的闩锁效应,学习学习.
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发表于 2012-12-12 09:12:53 | 显示全部楼层
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